Advances in Phase Change Memory Technology
نویسندگان
چکیده
Phase Change Memory is one of the best candidates for next generation non-volatile memory which can enlarge its applications segment, due to improved performances, and can fulfil the requirements for future down-scaling. Thermal, electrical and geometrical aspects controlling the functionality of a chalcogenide-based phase change memory cell are analysed. Processing condition effects, material properties and compatibility issues are investigated. Novel cell geometry, based on a μtrench approach, fully compatible with an advanced CMOS technology is presented. Sustainable programming currents, long cycling endurance and long-term data retention capabilities have been demonstrated for multi-megabit arrays.
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